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真空中X射线光子与二次电子对DNA损伤的比较。

Comparison between X-ray photon and secondary electron damage to DNA in vacuum.

作者信息

Cai Zhongli, Cloutier Pierre, Hunting Darel, Sanche Léon

机构信息

Faculté de médecine, Université de Sherbrooke, Sherbrooke, Quebec, Canada J1H 5N4.

出版信息

J Phys Chem B. 2005 Mar 17;109(10):4796-800. doi: 10.1021/jp0459458.

Abstract

Both monolayer and thick (20 microm) films of dry pGEM-3Zf(-) plasmid DNA deposited on tantalum foil were exposed to Al Kalpha X-rays (1.5 keV) for various times in an ultrahigh vacuum chamber. For monolayer DNA, the damage was induced mainly by low energy secondary electrons (SEs) emitted from the tantalum. For the thick films, DNA damage was induced chiefly by X-ray photons. Different forms of plasmid DNA were separated and quantified by agarose gel electrophoresis. The exposure curves for the formation of nicked circular (single strand break, SSB), linear (double strand break, DSB), and interduplex cross-link forms 1 and 2 were obtained for both monolayer and thick films of DNA, respectively. The lower limits of G values for SSB and DSB induced by SEs were derived to be 86 +/- 2 and 8 +/- 2 nmol J(-1), respectively. These values are 1.5 and 1.6 times larger than those obtained with 1.5 keV photons. The projected X-ray energy dependence of the low energy electron (LEE) enhancement factor for the SSB and DSB in monolayer DNA is also discussed. This new method of investigation of the SE-induced damage to large biomolecules allows direct comparison of the yield of products induced by high energy photons and LEEs under identical experimental conditions.

摘要

将沉积在钽箔上的单层和厚(20微米)干pGEM - 3Zf(-)质粒DNA薄膜在超高真空腔中暴露于Al Kα X射线(1.5 keV)不同时间。对于单层DNA,损伤主要由钽发射的低能二次电子(SEs)引起。对于厚膜,DNA损伤主要由X射线光子引起。通过琼脂糖凝胶电泳分离并定量不同形式的质粒DNA。分别获得了单层和厚层DNA薄膜形成缺口环状(单链断裂,SSB)、线性(双链断裂,DSB)以及双链间交联形式1和2的曝光曲线。由SEs诱导的SSB和DSB的G值下限分别推导为86±2和8±2 nmol J(-1)。这些值分别比用1.5 keV光子获得的值大1.5倍和1.6倍。还讨论了单层DNA中SSB和DSB的低能电子(LEE)增强因子的预计X射线能量依赖性。这种研究SEs对大型生物分子损伤的新方法允许在相同实验条件下直接比较高能光子和LEEs诱导的产物产率。

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