Alizadeh Elahe, Sanz Ana G, García Gustavo, Sanche Léon
Groupe en Sciences des Radiations, Faculté de Médecine et des Sciences de la Santé, Université de Sherbrooke, Sherbrooke, Québec, Canada.
Instituto de Física Fundumental, Consejo Suporior de Investigaciones Científicas, Madrid, Spain.
J Phys Chem Lett. 2013 Feb 19;4(5):820-825. doi: 10.1021/jz4000998.
We report the effect of DNA hydration level on damage yields induced by soft X-rays and photo-emitted low energy electrons (LEEs) in thin films of plasmid DNA irradiated in N at atmospheric pressure under different humidity levels. Contrary to a dilute solution of DNA, the number of HO molecules per nucleotide (Γ) in these films can be varied from Γ=2.5 to ~33, where Γ≤20 corresponds to layers of hydration and Γ=33 to an additional bulk-like water layer. Our results indicate that DNA damage induced by LEEs does not increase significantly until the second hydration shell is formed. However, this damage increases dramatically as DNA coverage approaches bulk-like hydration conditions. A number of phenomena are invoked to account for these behaviors including: dissociative electron transfer from water-interface electron traps to DNA bases, quenching of dissociative electron attachment to DNA and quenching of dissociative electronically excited states of HO in contact with DNA.
我们报告了在不同湿度水平下,于大气压的氮气中辐照的质粒DNA薄膜中,DNA水合水平对软X射线和光发射低能电子(LEEs)诱导的损伤产率的影响。与DNA稀溶液相反,这些薄膜中每个核苷酸的HO分子数(Γ)可以在Γ = 2.5至约33之间变化,其中Γ≤20对应于水合层,Γ = 33对应于额外的类似本体的水层。我们的结果表明,在形成第二水合壳之前,LEEs诱导的DNA损伤不会显著增加。然而,随着DNA覆盖率接近类似本体的水合条件,这种损伤会急剧增加。为解释这些行为,我们援引了许多现象,包括:从水界面电子陷阱到DNA碱基的解离电子转移、DNA解离电子附着的猝灭以及与DNA接触的HO解离电子激发态的猝灭。