Houtepen Arjan J, Vanmaekelbergh Daniël
Debye Institute, University Utrecht, POB 80000, 3508 TA Utrecht, The Netherlands.
J Phys Chem B. 2005 Oct 27;109(42):19634-42. doi: 10.1021/jp053103i.
We have prepared high-quality assemblies of monodisperse CdSe quantum dots and employed a combination of electrochemical gating and electrical and optical techniques to study orbital occupation in these quantum-dot solids. Electron occupation in localized states is important in some cases and can be unambiguously distinguished from occupation of the nanocrystal eigenstates. In addition, all excitonic transitions show a red-shift in the transition energy, due to the presence of electron charge. We infer that the energy of the S electrons is determined by the quantum-confinement energy and by Coulomb repulsions of the S electron with all other electrons in the assembly. By using a simple electron-repulsion model, we explain observed differences in the electron-addition energy for different samples, the broadening of the electron occupation as a function of electrochemical potential, and the strong dependence of the electron-addition energy on nanocrystal diameter.
我们制备了高质量的单分散CdSe量子点组件,并采用电化学门控以及电学和光学技术相结合的方法来研究这些量子点固体中的轨道占据情况。在某些情况下,局域态中的电子占据很重要,并且可以与纳米晶体本征态的占据情况明确区分开来。此外,由于电子电荷的存在,所有激子跃迁在跃迁能量上都表现出红移。我们推断,S电子的能量由量子限制能量以及S电子与组件中所有其他电子的库仑排斥作用决定。通过使用一个简单的电子排斥模型,我们解释了不同样品在电子添加能量方面观察到的差异、电子占据随电化学势的展宽以及电子添加能量对纳米晶体直径的强烈依赖性。