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N端近端结构域中电荷簇对HERG通道门控的调节作用。

Modulation of HERG gating by a charge cluster in the N-terminal proximal domain.

作者信息

Saenen J B, Labro A J, Raes A, Snyders D J

机构信息

Laboratory for Molecular Biophysics, Physiology and Pharmacology, Department of Biomedical Sciences, University of Antwerp, Antwerp Belgium.

出版信息

Biophys J. 2006 Dec 15;91(12):4381-91. doi: 10.1529/biophysj.106.087247. Epub 2006 Sep 22.

DOI:10.1529/biophysj.106.087247
PMID:16997865
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC1779935/
Abstract

Human ether-a-go-go-related gene (HERG) potassium channels contribute to the repolarization of the cardiac action potential and display unique gating properties with slow activation and fast inactivation kinetics. Deletions in the N-terminal 'proximal' domain (residues 135-366) have been shown to induce hyperpolarizing shifts in the voltage dependence of activation, suggesting that it modulates activation. However, we did not observe a hyperpolarizing shift with a subtotal deletion designed to preserve the local charge distribution, and other deletions narrowed the region to the KIKER containing sequence 362-372. Replacing the positively charged residues of this sequence by negative ones (EIEEE) resulted in a -45 mV shift of the voltage dependence of activation. The shifts were intermediate for individual charge reversals, whereas E365R resulted in a positive shift. Furthermore, the shifts in the voltage dependence were strongly correlated with the net charge of the KIKER region. The apparent speeding of the activation was attributable to the shifted voltage dependence of activation. Additionally, the introduction of negative charges accelerated the intermediate voltage-independent forward rate constant. We propose that the modulatory effects of the proximal domain on HERG gating are largely electrostatic, localized to the charged KIKER sequence.

摘要

人醚 - 去极化相关基因(HERG)钾通道有助于心脏动作电位的复极化,并表现出独特的门控特性,即激活缓慢且失活动力学快速。已证明N端“近端”结构域(第135 - 366位氨基酸残基)的缺失会导致激活电压依赖性的超极化偏移,这表明该结构域调节激活过程。然而,我们用一个旨在保留局部电荷分布的部分缺失突变体并未观察到超极化偏移,并且其他缺失突变将区域缩小至包含362 - 372位氨基酸残基的KIKER序列。将该序列中的带正电残基替换为带负电残基(EIEEE)导致激活电压依赖性发生了 - 45 mV的偏移。单个电荷反转时偏移处于中间状态,而E365R导致了正向偏移。此外,激活电压依赖性的偏移与KIKER区域的净电荷密切相关。激活明显加快归因于激活电压依赖性的改变。此外,引入负电荷加速了中间电压非依赖性的正向速率常数。我们提出近端结构域对HERG门控的调节作用在很大程度上是静电性的,定位于带电荷的KIKER序列。

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本文引用的文献

1
The S4-S5 linker directly couples voltage sensor movement to the activation gate in the human ether-a'-go-go-related gene (hERG) K+ channel.S4-S5连接子将人类醚-a'-去极化相关基因(hERG)钾通道中的电压传感器运动与激活门直接耦合。
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Optical detection of rate-determining ion-modulated conformational changes of the ether-à-go-go K+ channel voltage sensor.光学检测醚-去-去钾通道电压传感器的限速离子调节构象变化。
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Tryptophan scanning mutagenesis of the HERG K+ channel: the S4 domain is loosely packed and likely to be lipid exposed.人乙醚 - 去极化激活钾离子通道(HERG K+通道)的色氨酸扫描诱变:S4结构域堆积松散且可能暴露于脂质中。
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Crystal structure of a mammalian voltage-dependent Shaker family K+ channel.一种哺乳动物电压依赖性Shaker家族钾离子通道的晶体结构。
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HERG mutation predicts short QT based on channel kinetics but causes long QT by heterotetrameric trafficking deficiency.HERG突变基于通道动力学预测短QT,但通过异源四聚体转运缺陷导致长QT。
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Voltage-gated ion channels.电压门控离子通道
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Novel mutation in the Per-Arnt-Sim domain of KCNH2 causes a malignant form of long-QT syndrome.KCNH2基因Per-Arnt-Sim结构域中的新型突变导致一种恶性长QT综合征。
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