Fonoberov Vladimir A, Balandin Alexander A
Nano-Device Laboratory, Department of Electrical Engineering, University of California-Riverside, Riverside, California 92521, USA.
Nano Lett. 2006 Nov;6(11):2442-6. doi: 10.1021/nl061554o.
We show theoretically that the low-field carrier mobility in silicon nanowires can be greatly enhanced by embedding the nanowires within a hard material such as diamond. The electron mobility in the cylindrical silicon nanowires with 4-nm diameter, which are coated with diamond, is 2 orders of magnitude higher at 10 K and a factor of 2 higher at room temperature than the mobility in a free-standing silicon nanowire. The importance of this result for the downscaled architectures and possible silicon-carbon nanoelectronic devices is augmented by an extra benefit of diamond, a superior heat conductor, for thermal management.
我们从理论上表明，通过将硅纳米线嵌入诸如金刚石之类的硬质材料中，硅纳米线中的低场载流子迁移率可得到极大提高。直径为4纳米、表面涂覆有金刚石的圆柱形硅纳米线中的电子迁移率，在10K时比独立硅纳米线中的迁移率高2个数量级，在室温下则高2倍。金刚石作为一种卓越的热导体，在热管理方面具有额外优势，这进一步增强了该结果对于缩小尺寸架构和可能的硅碳纳米电子器件的重要性。
