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通过硅(111)表面的甲基封端控制硅/水界面的稳定性、电子转移动力学和pH依赖性能量学。

Control of the stability, electron-transfer kinetics, and pH-dependent energetics of Si/H2O interfaces through methyl termination of Si(111) surfaces.

作者信息

Hamann Thomas W, Lewis Nathan S

出版信息

J Phys Chem B. 2006 Nov 16;110(45):22291-4. doi: 10.1021/jp064401y.

Abstract

Methyl-terminated, n-type, (111)-oriented Si surfaces were prepared via a two-step chlorination-alkylation method. This surface modification passivated the Si surface toward electrochemical oxidation and thereby allowed measurements of interfacial electron-transfer processes in contact with aqueous solutions. The resulting semiconductor/liquid junctions exhibited interfacial kinetics behavior in accord with the ideal model of a semiconductor/liquid junction. In contrast to the behavior of H-terminated Si(111) surfaces, current density vs. potential measurements of CH(3)-terminated Si(111) surfaces in contact with an electron acceptor having a pH-independent redox potential (methyl viologen(2+/+)) were used to verify that the band edges of the modified Si electrode were fixed with respect to changes in solution pH. The results provide strong evidence that the energetics of chemically modified Si interfaces can be fixed with respect to pH and show that the band-edge energies of Si can be tuned independently of pH-derived variations in the electrochemical potential of the solution redox species.

摘要

通过两步氯化-烷基化方法制备了甲基封端的、n型、(111)取向的硅表面。这种表面改性使硅表面对电化学氧化具有钝化作用,从而能够测量与水溶液接触时的界面电子转移过程。所得的半导体/液体结表现出符合半导体/液体结理想模型的界面动力学行为。与氢封端的Si(111)表面的行为相反,与具有pH无关的氧化还原电位(甲基紫精(2+/+))的电子受体接触的CH(3)封端的Si(111)表面的电流密度与电位测量用于验证改性硅电极的能带边缘相对于溶液pH值的变化是固定的。结果提供了有力证据,表明化学改性的硅界面的能量学可以相对于pH值固定,并表明硅的能带边缘能量可以独立于溶液氧化还原物种的电化学电位中pH值衍生的变化进行调节。

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