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利用印刷半导体纳米材料制备的异质三维电子器件。

Heterogeneous three-dimensional electronics by use of printed semiconductor nanomaterials.

作者信息

Ahn Jong-Hyun, Kim Hoon-Sik, Lee Keon Jae, Jeon Seokwoo, Kang Seong Jun, Sun Yugang, Nuzzo Ralph G, Rogers John A

机构信息

Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign, IL 61801, USA.

出版信息

Science. 2006 Dec 15;314(5806):1754-7. doi: 10.1126/science.1132394.

Abstract

We developed a simple approach to combine broad classes of dissimilar materials into heterogeneously integrated electronic systems with two- or three-dimensional layouts. The process begins with the synthesis of different semiconductor nanomaterials, such as single-walled carbon nanotubes and single-crystal micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates. Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates. This versatile methodology can produce a wide range of unusual electronic systems that would be impossible to achieve with other techniques.

摘要

我们开发了一种简单的方法,可将各类不同材料组合成具有二维或三维布局的异质集成电子系统。该过程始于在单独的衬底上合成不同的半导体纳米材料,如单壁碳纳米管以及氮化镓、硅和砷化镓的单晶微米级和纳米级线与带。通过使用这些衬底作为供体的软印章,重复进行添加剂转移印刷工艺,随后进行器件和互连形成,可生产出高性能的异质集成电子产品,这些产品在刚性或柔性器件衬底上集成了任何组合的半导体纳米材料。这种通用方法能够制造出一系列用其他技术无法实现的独特电子系统。

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