Yin Long-Wei, Bando Yoshio, Li Mu-Sen, Golberg Dmitri
Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Small. 2005 Nov;1(11):1094-9. doi: 10.1002/smll.200500168.
An in situ liquid gallium-gas interface chemical reaction route has been developed to synthesize semiconducting hollow GaN nanospheres with very small shell size by carefully controlling the synthesis temperature and the ammonia reaction gas partial pressure. In this process the gallium droplet does not act as a catalyst but rather as a reactant and a template for the formation of hollow GaN structures. The diameter of the synthesized hollow GaN spheres is typically 20-25 nm and the shell thickness is 3.5-4.5 nm. The GaN nanotubes obtained at higher synthesis temperatures have a length of several hundreds of nanometers and a wall thickness of 3.5-5.0 nm. Both the hollow GaN spheres and nanotubes are polycrystalline and are composed of very fine GaN nanocrystalline particles with a diameter of 3.0-3.5 nm. The room-temperature photoluminescence (PL) spectra for the synthesized hollow GaN spheres and nanotubes, which have a narrow size distribution, display a sharp, blue-shifted band-edge emission peak at 3.52 eV (352 nm) due to quantum size effects.
通过仔细控制合成温度和氨反应气体分压，开发了一种原位液 - 气界面化学反应路线，以合成具有非常小的壳尺寸的半导体中空GaN纳米球。在此过程中，镓液滴不作为催化剂，而是作为反应物和形成中空GaN结构的模板。合成的中空GaN球的直径通常为20 - 25nm，壳厚度为3.5 - 4.5nm。在较高合成温度下获得的GaN纳米管长度为几百纳米，壁厚为3.5 - 5.0nm。中空GaN球和纳米管均为多晶，由直径为3.0 - 3.5nm的非常细的GaN纳米晶颗粒组成。合成的中空GaN球和纳米管具有窄尺寸分布，其室温光致发光（PL）光谱由于量子尺寸效应在3.52eV（352nm）处显示出尖锐的、蓝移的带边发射峰。
