Mann A K, Varandani D, Mehta B R, Malhotra L K, Shivaprasad S M
Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
J Nanosci Nanotechnol. 2005 Nov;5(11):1858-63. doi: 10.1166/jnn.2005.424.
This study reports the synthesis of GaN nanoparticles having hexagonal structure by a simple technique of activated reactive evaporation with substrates kept at comparatively lower temperatures than usually reported. By varying the substrate temperature from 30 degrees C to 350 degrees C, it is possible to vary nanoparticle sizes from 5-30 nm. X-ray diffraction and X-ray photoelectron spectroscopy analysis confirm the formation of GaN on quartz and silicon substrates at room temperature. The observed size dependent shift in energy position, large increase in full width at half maximum value of Ga 3d and N 1s X-ray photoelectron spectroscopy peaks and blue shift in the optical absorption edge are related to nanoparticle character.
本研究报告了通过一种简单的活性反应蒸发技术合成具有六边形结构的氮化镓纳米颗粒，该技术中衬底保持在比通常报道的温度相对更低的温度。通过将衬底温度从30摄氏度变化到350摄氏度，可以使纳米颗粒尺寸从5 - 30纳米变化。X射线衍射和X射线光电子能谱分析证实了在室温下在石英和硅衬底上形成了氮化镓。观察到的能量位置的尺寸依赖性位移、Ga 3d和N 1s X射线光电子能谱峰的半高宽的大幅增加以及光吸收边缘的蓝移都与纳米颗粒特性有关。
