Department of Genetics, John Innes Institute, Norwich NR4 7UH, England.
Genetics. 1988 May;119(1):171-84. doi: 10.1093/genetics/119.1.171.
The transposable element, Tam3, gives rise to large-scale (greater than 1 kb) chromosomal rearrangements at a low frequency, when it is inserted at the nivea locus of Antirrhinum majus. Although some deletions may result from imprecise excision of Tam3, rearrangements involving deletion, dispersion and inverted duplication of flanking sequences, where Tam3 remains in situ, have also been identified. These rearrangements have been mapped at the molecular level, and the behavior of Tam3 following rearrangement has been observed. It is clear that Tam3 has enormous potential to restructure chromosomes through successive rounds of large-scale rearrangements. The mechanisms by which such rearrangements might arise are discussed.
转座元件 Tam3 在被插入金鱼草 nivea 基因座时,低频引发大规模(大于 1 kb)染色体重排。虽然 Tam3 的不精确切除可能导致某些缺失,但也鉴定到了涉及侧翼序列缺失、分散和反向重复的重排,而 Tam3 仍位于原位。这些重排在分子水平上进行了定位,并观察了重排后 Tam3 的行为。显然,Tam3 具有通过连续轮次的大规模重排来重构染色体的巨大潜力。讨论了可能产生这种重排的机制。