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在GaMnAs铁磁半导体薄膜的磁化反转过程中形成的稳定多畴结构。

Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films.

作者信息

Shin D Y, Chung S J, Lee Sanghoon, Liu X, Furdyna J K

机构信息

Physics Department, Korea University, Seoul 136-701, Korea.

出版信息

Phys Rev Lett. 2007 Jan 26;98(4):047201. doi: 10.1103/PhysRevLett.98.047201. Epub 2007 Jan 22.

DOI:10.1103/PhysRevLett.98.047201
PMID:17358804
Abstract

The process of magnetization reversal in ferromagnetic Ga(1-x)Mn(x)As epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a) multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain.

摘要

利用平面霍尔效应(PHE)对铁磁体Ga(1-x)Mn(x)As外延层中的磁化反转过程进行了系统研究。有趣的是,当磁场扫描范围限制在低于最终磁化转变的磁场时,我们在PHE磁滞中观察到了明显的不对称性。观察到的行为表明:(a)随着磁化强度M重新取向会形成多畴结构;(b)即使在磁场关闭后,以这种方式形成的畴结构仍保持稳定;(c)对应于PHE转变点的磁化方向重新取向在每个畴内分别发生。

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