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卤素……卤化物合成子的本质:理论与晶体学研究

The nature of halogen...halide synthons: theoretical and crystallographic studies.

作者信息

Awwadi Firas F, Willett Roger D, Peterson Kirk A, Twamley Brendan

机构信息

Department of Chemistry, Washington State University, Pullman, Washington 99164, USA.

出版信息

J Phys Chem A. 2007 Mar 29;111(12):2319-28. doi: 10.1021/jp0660684. Epub 2007 Mar 8.

Abstract

Two types of halogen...halide synthons are investigated on the basis of theoretical and crystallographic studies; the simple halogen...halide synthons and the charge assisted halogen...halide synthons. The former interactions were investigated theoretically (ab initio) by studying the energy of interaction of a halide anion with a halocarbon species as a function of Y...X- separation distance and the C-Y...X- angle in a series of complexes (R-Y...X-, R=methyl, phenyl, acetyl or pyridyl; Y=F, Cl, Br, or I; X-=F-, Cl-, Br-, or I-). The theoretical study of the latter interaction type was investigated in only one system, the [(4BP)Cl]2 dimer, (4BP=4-bromopyrdinium cation). Crystal structure determinations, to complement the latter theoretical calculations, were performed on 13 n-chloropyridinium and n-bromopyridinium halide salts (n=2-4). The theoretical and crystallographic studies indicate that these interactions are controlled by electrostatics and are characterized by linear C-Y...X- angles and separation distances less than the sum of van der Waals radius (rvdW) of the halogen atom and the ionic radii of the halide anion. The strength of these contacts from calculations varies from weak or absent, e.g., H3C-Cl...I-, to very strong, e.g., HCC-I...F- (energy of interaction ca. -153 kJ/mol). The strengths of these contacts are influenced by four factors: (a) the type of the halide anion; (b) the type of the halogen atom; (c) the hybridization of the ipso carbon; (d) the nature of the functional groups. The calculations also show that charge assisted halogen...halide synthons have a comparable strength to simple halogen...halide synthons. The nature of these contacts is explained on the basis of an electrostatic model.

摘要

基于理论和晶体学研究,对两种类型的卤素……卤化物合成子进行了研究;简单的卤素……卤化物合成子和电荷辅助的卤素……卤化物合成子。通过研究卤化物阴离子与卤代烃物种相互作用的能量,作为一系列配合物(R - Y……X - ,R = 甲基、苯基、乙酰基或吡啶基;Y = F、Cl、Br或I;X - = F - 、Cl - 、Br - 或I - )中Y……X - 分离距离和C - Y……X - 角度的函数,从理论上(从头算)研究了前者的相互作用。仅在一个体系[(4BP)Cl]₂二聚体(4BP = 4 - 溴吡啶鎓阳离子)中研究了后者相互作用类型的理论。为补充后者的理论计算,对13种正氯吡啶鎓和正溴吡啶鎓卤化物盐(n = 2 - 4)进行了晶体结构测定。理论和晶体学研究表明,这些相互作用受静电作用控制,其特征是线性的C - Y……X - 角度和小于卤素原子范德华半径(rvdW)与卤化物阴离子离子半径之和的分离距离。计算得出的这些接触的强度变化范围从弱或不存在,例如H₃C - Cl……I - ,到非常强,例如HCC - I……F - (相互作用能量约为 - 153 kJ/mol)。这些接触的强度受四个因素影响:(a)卤化物阴离子的类型;(b)卤素原子的类型;(c)本位碳的杂化;(d)官能团的性质。计算还表明,电荷辅助的卤素……卤化物合成子与简单的卤素……卤化物合成子具有相当的强度。基于静电模型解释了这些接触的性质。

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