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卤素……卤素合成子的性质:晶体学与理论研究

The nature of halogen...halogen synthons: crystallographic and theoretical studies.

作者信息

Awwadi Firas F, Willett Roger D, Peterson Kirk A, Twamley Brendan

机构信息

Department of Chemistry, Jordan University of Science and Technology, Irbid, Jordan.

出版信息

Chemistry. 2006 Dec 4;12(35):8952-60. doi: 10.1002/chem.200600523.

Abstract

A study of the halogen...halogen contacts in organic compounds using ab initio calculations and the results of previously reported crystallographic studies show that these interactions are controlled by electrostatics. These contacts can be represented by the geometric parameters of the C--X1...X2--C moieties (where theta1=C--X1...X2 and theta2=X1...X2--C; ri=X1...X2 distance). The distributions of the contacts within the sum of van der Waals radii (rvdW) versus thetai (theta1=theta2) show a maximum at theta approximately 150 degrees for X=Cl, Br, and I. This maximum is not seen in the distribution of F...F contacts. These results are in good agreement with our ab initio calculations. The theoretical results show that the position of the maximum depends on three factors: 1) The type of halogen atom, 2) the hybridization of the ipso carbon atom, and 3) the nature of the other atoms that are bonded to the ipso carbon atom apart from the halogen atom. Calculations show that the strength of these contacts decreases in the following order: I...I>Br...Br>Cl...Cl. Their relative strengths decrease as a function of the hybridization of the ipso carbon atom in the following order: sp2>sp>sp3. Attaching an electronegative atom to the carbon atom strengthens the halogen...halogen contacts. An electrostatic model is proposed based on two assumptions: 1) The presence of a positive electrostatic end cap on the halogen atom (except for fluorine) and 2) the electronic charge is anisotropically distributed around the halogen atom.

摘要

一项使用从头算计算以及先前报道的晶体学研究结果对有机化合物中卤素……卤素相互作用的研究表明,这些相互作用受静电作用控制。这些相互作用可以用C--X1...X2--C部分的几何参数来表示(其中θ1 = C--X1...X2且θ2 = X1...X2--C;ri = X1...X2距离)。范德华半径总和(rvdW)内的相互作用分布与θi(θ1 = θ2)的关系表明,对于X = Cl、Br和I,在θ约为150度时出现最大值。在F...F相互作用的分布中未观察到该最大值。这些结果与我们的从头算计算结果高度吻合。理论结果表明,最大值的位置取决于三个因素:1)卤素原子的类型,2)本位碳原子的杂化类型,3)除卤素原子外与本位碳原子相连的其他原子的性质。计算表明,这些相互作用的强度按以下顺序降低:I...I>Br...Br>Cl...Cl。它们的相对强度随本位碳原子杂化类型的变化按以下顺序降低:sp2>sp>sp3。在碳原子上连接一个电负性原子会增强卤素……卤素相互作用。基于两个假设提出了一个静电模型:1)卤素原子(氟除外)上存在正静电端帽,2)电子电荷在卤素原子周围呈各向异性分布。

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