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交换耦合及其在磁数据存储中的应用。

Exchange coupling and its applications in magnetic data storage.

作者信息

Li Kebin, Wu Yihong, Guo Zaibing, Zheng Yuankai, Han Guchang, Qiu Jinjun, Luo Ping, An Lihua, Zhou Tiejun

机构信息

Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608.

出版信息

J Nanosci Nanotechnol. 2007 Jan;7(1):13-45.

Abstract

The continuing scaling of magnetic recording is facing more and more scientific and technological challenges because both the read sensor and recording bit are approaching sub-50 nm regime with the ever increasing areal density in hard disk drives. One of the key and indispensable elements for both high-sensitivity sensors and high-density media is the exchange bias between a ferromagnetic and an antiferromagnetic layer or the exchange coupling between two ferromagnets via a non-magnetic spacer. In the nanometer regime, the exchange coupling between ferromagnet and antiferromagnet or two ferromagnets through a conductive spacer is governed by the intergrain exchange interaction which has its origin in electron spins. Interlayer exchange coupling in multilayer or trilayer essentially originates from the quantum confinement effect. In this paper, we first review the physical origin and various theoretical models of the two types of exchange couplings, followed by a review of the applications of the exchange bias and interlayer exchange coupling in data storage with emphasis on the advanced read sensor and advanced media including perpendicular media and patterned media.

摘要

随着硬盘驱动器面密度的不断增加,读传感器和记录位都在接近50纳米以下的范围,磁记录的持续缩放正面临越来越多的科学和技术挑战。对于高灵敏度传感器和高密度介质来说,一个关键且不可或缺的要素是铁磁层和反铁磁层之间的交换偏置,或者是通过非磁性间隔层的两个铁磁体之间的交换耦合。在纳米尺度下,铁磁体和反铁磁体或两个铁磁体之间通过导电间隔层的交换耦合是由源于电子自旋的晶粒间交换相互作用所控制的。多层或三层结构中的层间交换耦合本质上源于量子限制效应。在本文中,我们首先回顾这两种类型交换耦合的物理起源和各种理论模型,随后回顾交换偏置和层间交换耦合在数据存储中的应用,重点是先进的读传感器以及包括垂直介质和图案化介质在内的先进介质。

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