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硅纳米晶体存储器:现状更新

Silicon nanocrystal memories: a status update.

作者信息

Compagnoni Christian Monzio, Gusmeroli Riccardo, Ielmini Daniele, Spinelli Alessandro S, Lacaita Andrea L

机构信息

Dipartimento di Elettronica e Informazione, Politecnico di Milano-IU.NET, piazza L. da Vinci 32, 20133 Milano, Italy.

出版信息

J Nanosci Nanotechnol. 2007 Jan;7(1):193-205.

Abstract

In the last decade, the silicon nanocrystal memory technology has received widespread interests from the scientific community working in the field of non-volatile solid-state memories, considering it as a feasible candidate for the post-Flash scenario. The immunity to stress-induced leakage current and the reduction of parasitic floating-gate capacitive couplings make the nanocrystal technology very attractive, especially when considering the CMOS compatible process flow. However, many open issues still exist for its development, first of all concerning its scaling perspectives. Starting from the discussion of the basic principles of nanocrystal storage, in this paper we review the major benefits and the open challenges of the silicon nanocrystal memory technology.

摘要

在过去十年中,硅纳米晶体存储技术引起了非易失性固态存储器领域科学界的广泛关注,被视为闪存后时代的一个可行候选方案。对应力诱导漏电流的免疫能力以及寄生浮栅电容耦合的减少,使得纳米晶体技术极具吸引力,尤其是考虑到其与CMOS兼容的工艺流程时。然而,其发展仍存在许多未解决的问题,首先涉及到它的缩放前景。从对纳米晶体存储基本原理的讨论出发,本文回顾了硅纳米晶体存储技术的主要优势和面临的开放性挑战。

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