Stricker Jeffery T, Gudmundsdóttir Anna D, Smith Adam P, Taylor Barney E, Durstock Michael F
Department of Chemistry, University of Cincinnati, Cincinnati, Ohio, USA.
J Phys Chem B. 2007 Jun 14;111(23):6322-6. doi: 10.1021/jp0688862. Epub 2007 May 19.
Layer-by-layer assembly is presented as a deposition technique for the incorporation of ultrathin gate dielectric layers into thin-film transistors utilizing a highly doped organic active layer. This deposition technique enables the fabrication of device structures with a controllable gate dielectric thickness. In particular, devices with a dielectric layer comprised of poly(allylamine hydrochloride)/poly(acrylic acid) (PAH/PAA) bilayer films were fabricated to examine the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the transistor active layer. The transistor Ion/off ratio and switching speed are shown to be controlled by the gate bias, which is dependent upon the voltage applied and the number of bilayers deposited for the gate dielectric. The devices operate in the depletion mode as a result of dedoping of the active layer with the application of a positive gate bias. The depletion and recovery rate are highly dependent on the level of hydration in the film and the environment under which the device is operated. These observations are consistent with an electrochemical dedoping of the conducting polymer during operation.
逐层组装作为一种沉积技术，用于将超薄栅极介电层引入到利用高掺杂有机活性层的薄膜晶体管中。这种沉积技术能够制造出具有可控栅极介电层厚度的器件结构。特别地，制造了具有由聚（烯丙胺盐酸盐）/聚（丙烯酸）（PAH/PAA）双层膜组成的介电层的器件，以研究聚（3,4-亚乙基二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT:PSS）作为晶体管活性层的性能。晶体管的开/关比和开关速度显示受栅极偏压控制，栅极偏压取决于所施加的电压以及为栅极电介质沉积的双层膜数量。由于施加正栅极偏压时活性层的去掺杂，器件以耗尽模式工作。耗尽和恢复速率高度依赖于薄膜中的水合程度以及器件工作的环境。这些观察结果与操作过程中导电聚合物的电化学去掺杂一致。
