为全溶液处理的高性能柔性有机薄膜晶体管实现栅极电介质设计。

Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors.

作者信息

Liu Ping, Wu Yiliang, Li Yuning, Ong Beng S, Zhu Shiping

机构信息

Materials Design & Integration Laboratory, Xerox Research Centre of Canada, Mississauga, Ontario, Canada.

出版信息

J Am Chem Soc. 2006 Apr 12;128(14):4554-5. doi: 10.1021/ja060620l.

DOI:10.1021/ja060620l

PMID:16594675

Abstract

A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated.

摘要

描述了一种新型的溶液处理的、组成和结构稳定的双层栅极电介质，其由用于有机薄膜晶体管的紫外光固化聚（4-乙烯基苯酚）-共聚（甲基丙烯酸甲酯）底层和热交联聚（甲基倍半硅氧烷）顶层组成。这种栅极电介质设计，与兼容的可溶液处理的半导体和导体材料相结合，能够在柔性基板上制造全溶液处理的高性能有机薄膜晶体管。展示了高场效应迁移率和电流开/关比，以及其他理想的晶体管特性。