Angus Susan J, Ferguson Andrew J, Dzurak Andrew S, Clark Robert G
Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, Australia.
Nano Lett. 2007 Jul;7(7):2051-5. doi: 10.1021/nl070949k. Epub 2007 Jun 14.
We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.
我们报告了在窄沟道场效应晶体管中具有可调隧道势垒的硅量子点的制备与测量。在多电子（约100个电子） regime和少电子（约10个电子） regime下均进行了低温输运光谱测量。偏置光谱中的激发态提供了量子限制的证据。这些结果表明耗尽栅极是在硅中定义量子点的一种有效技术。
