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锑化铟纳米线量子点中的巨量、与能级相关的g因子。

Giant, level-dependent g factors in InSb nanowire quantum dots.

作者信息

Nilsson Henrik A, Caroff Philippe, Thelander Claes, Larsson Marcus, Wagner Jakob B, Wernersson Lars-Erik, Samuelson Lars, Xu H Q

机构信息

Division of Solid State Physics, Lund University, S-22100 Lund, Sweden.

出版信息

Nano Lett. 2009 Sep;9(9):3151-6. doi: 10.1021/nl901333a.

Abstract

We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to approximately 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(SO) = 280 mueV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.

摘要

我们报告了对锑化铟纳米线量子点的磁输运测量结果。测量结果表明,锑化铟量子点的量子能级具有巨大的g因子,绝对值高达约70,这是半导体量子点有史以来报道的最大值。我们还观察到,这些g因子的值与量子能级有关,并且在不同量子能级之间可能有很大差异。巨大g因子的存在表明,在测量的锑化铟纳米线量子点中,电子轨道运动有相当大的贡献得以保留,而能级间的波动则源于自旋轨道相互作用。我们从具有固定电子数的锑化铟纳米线量子点的基态和第一激发态之间的一个避免能级交叉中,推导出自旋轨道相互作用强度的Δ(SO)=280毫电子伏特的值。

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