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氮化铝薄膜谐振器中杂散模式的二维分析

Two-dimensional analysis of spurious modes in aluminum nitride film resonators.

作者信息

Gong Xun, Han Min, Shang Xiaoli, Xiong Jun, Duan Jie, Sekimoto Hitoshi

机构信息

Laboratory of Modern Acoustics, Nanjing University, Nanjing, Jiangsu 210093, China.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Jun;54(6):1171-6. doi: 10.1109/tuffc.2007.370.

Abstract

In this paper, a hybrid method, which combines the traditional concept of guided waves and the finite element method (FEM), is proposed to analyze the spurious modes of aluminum nitride (AIN) film with electrodes. First, the guided wave modes in the plated area are obtained by 1-D FEM. Second, a mode-match method is used to satisfy the boundary conditions. The vibration of the film resonator is a superposition of all of the guided modes. With respect to an A1N film resonator, which is a thickness-stretch mode resonator, we have identified three families of spurious modes: extension, thickness-stretch, and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed.

摘要

本文提出了一种将传统导波概念与有限元方法(FEM)相结合的混合方法,用于分析带有电极的氮化铝(AIN)薄膜的杂散模式。首先,通过一维有限元方法获得镀膜区域中的导波模式。其次,使用模式匹配方法来满足边界条件。薄膜谐振器的振动是所有导波模式的叠加。对于作为厚度伸缩模式谐振器的AlN薄膜谐振器,我们识别出了三类杂散模式:伸展、厚度伸缩和厚度剪切。计算了杂散模式的频谱并讨论了杂散模式的影响。

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