Wu Le Ke, Hao Hui Lian, Shen Wen Zhong, Ariyawansa Gamini, Perera A G Unil, Matsik Steven G
Department of Physics, Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China.
Opt Lett. 2007 Aug 15;32(16):2366-8. doi: 10.1364/ol.32.002366.
We have proposed a type of mid-infrared (MIR) and far-infrared (FIR) dual-band imaging device, which employs the photon frequency upconversion concept in a GaN/AlGaN MIR and FIR dual-band detector integrated with a GaN/AlGaN violet light emitting diode. On the basis of the photoresponse of single-period GaN/AlGaN dual-band detectors, we present the detailed optimization of multiperiod GaN emitter/AlGaN barrier detectors and their applications to dual-band pixelless upconversion imaging. Satisfying images have been received through the analysis of the modulation transfer function and the upconversion efficiency in the GaN/AlGaN dual-band pixelless upconverters, which exhibit good image resolution, high quantum efficiency, and negligible cross talk.
我们提出了一种中红外（MIR）和远红外（FIR）双波段成像装置，该装置在与氮化镓/氮化铝镓紫光发光二极管集成的氮化镓/氮化铝镓中红外和远红外双波段探测器中采用了光子频率上转换概念。基于单周期氮化镓/氮化铝镓双波段探测器的光响应，我们展示了多周期氮化镓发射极/氮化铝镓势垒探测器的详细优化及其在双波段无像素上转换成像中的应用。通过对氮化镓/氮化铝镓双波段无像素上变频器中的调制传递函数和上转换效率进行分析，获得了令人满意的图像，该上变频器具有良好的图像分辨率、高量子效率和可忽略不计的串扰。
