Shen T C, Wang C, Abeln G C, Tucker J R, Lyding J W, Avouris P, Walkup R E
Science. 1995 Jun 16;268(5217):1590-2. doi: 10.1126/science.268.5217.1590.
The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.
扫描隧道显微镜已被用于从氢终止的硅（100）表面解吸氢。通过控制入射电子剂量，可以产生可数数量的解吸位点，从而获得产率和截面。观察到两种不同的解吸机制：（i）场发射电子对Si-H键的直接电子激发，以及（ii）一种原子分辨率机制，该机制涉及在低施加电压下隧道电子的多振动激发。这种振动加热效应为控制涉及吸附的单个原子和分子的表面反应提供了巨大潜力。
