Park Inkyu, Li Zhiyong, Pisano Albert P, Williams R Stanley
Berkeley Sensor and Actuator Center (BSAC), University of California, Berkeley, California 94720-1774, USA.
Nano Lett. 2007 Oct;7(10):3106-11. doi: 10.1021/nl071637k. Epub 2007 Sep 26.
In this letter, we report a novel approach to selectively functionalize the surface of silicon nanowires located on silicon-based substrates. This method is based upon highly localized nanoscale Joule heating along silicon nanowires under an applied electrical bias. Numerical simulation shows that a high-temperature (>800 K) with a large thermal gradient can be achieved by applying an appropriate electrical bias across silicon nanowires. This localized heating effect can be utilized to selectively ablate a protective polymer layer from a region of the chosen silicon nanowire. The exposed surface, with proper postprocessing, becomes available for surface functionalization with chemical linker molecules, such as 3-mercaptopropyltrimethoxysilanes, while the surrounding area is still protected by the chemically inert polymer layer. This approach is successfully demonstrated on silicon nanowire arrays fabricated on SOI wafers and visualized by selective attachment of gold nanoparticles.
在本信函中，我们报告了一种选择性地使位于硅基衬底上的硅纳米线表面功能化的新方法。该方法基于在施加电偏压时沿硅纳米线的高度局部化的纳米级焦耳热。数值模拟表明，通过在硅纳米线上施加适当的电偏压，可以实现具有大热梯度的高温（>800 K）。这种局部加热效应可用于从所选硅纳米线的区域选择性地烧蚀保护性聚合物层。经过适当的后处理，暴露的表面可用于与化学连接分子（如3-巯基丙基三甲氧基硅烷）进行表面功能化，而周围区域仍由化学惰性聚合物层保护。该方法在绝缘体上硅（SOI）晶圆上制造的硅纳米线阵列上得到了成功验证，并通过金纳米颗粒的选择性附着进行了可视化。
