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植入式设备在3特斯拉和7特斯拉磁场下的电磁及建模分析。

Electromagnetic and modeling analyses of an implanted device at 3 and 7 Tesla.

作者信息

Ibrahim Tamer S, Tang Lin, Kangarlu Alayar, Abraham Roney

机构信息

Department of Radiology, University of Pittsburgh, Pittsburgh, Pennsylvania 15213, USA.

出版信息

J Magn Reson Imaging. 2007 Nov;26(5):1362-7. doi: 10.1002/jmri.21148.

Abstract

PURPOSE

To study the specific absorption rates (SAR) associated with implantable devices at 3T and 7 T.

MATERIALS AND METHODS

Studies were carried out utilizing a finite difference time domain (FDTD) model that treats the radio frequency (RF) coil and an anatomically detailed human head mesh as a single system. Analyses were performed at 3 T and 7 T for different orientations and positions of an implanted (in the brain) aneurysm clip. Studies were also performed for two different types of FDTD mesh of the same aneurysm clip.

RESULTS

The results showed that: 1) the electromagnetic effects of implanting the aneurysm clip (in the brain) is mostly local on SARs; and 2) orientations of the implanted aneurysm clip have considerable effect on the local SARs near the implanted clip; the level of such an effect can also vary significantly between 3 T and 7 T.

CONCLUSION

In general, the presented study shows that the local SARs (in 1 g and in 10 g of tissue) near the implanted aneurysm clip are lower than the peak SARs (due to the standard RF coil operation) in other regions of the human head mesh/brain. For specific orientations, however, if the aneurysm clip is implanted in a region in which the brain peak-SAR occurs due the standard RF coil operation, the brain peak SAR increases further. This is more prevalent at 7T compared to 3T. Additionally, it was also found that basic structured and Cartesian FDTD modeling produces relatively higher local SARs than that obtained with simple non-Cartesian FDTD modeling.

摘要

目的

研究植入式设备在3T和7T磁场下的比吸收率(SAR)。

材料与方法

利用时域有限差分(FDTD)模型进行研究,该模型将射频(RF)线圈和具有详细解剖结构的人体头部网格视为一个单一系统。针对植入(脑部)的动脉瘤夹在3T和7T磁场下的不同方向和位置进行了分析。还针对同一动脉瘤夹的两种不同类型的FDTD网格进行了研究。

结果

结果表明:1)植入(脑部)动脉瘤夹的电磁效应在很大程度上对比吸收率具有局部影响;2)植入的动脉瘤夹的方向对植入夹附近的局部比吸收率有相当大的影响;这种影响的程度在3T和7T之间也可能有显著差异。

结论

总体而言,本研究表明,植入的动脉瘤夹附近(1g和10g组织中)的局部比吸收率低于人体头部网格/脑部其他区域的峰值比吸收率(由于标准RF线圈操作)。然而,对于特定方向,如果动脉瘤夹植入在因标准RF线圈操作而出现脑部峰值比吸收率的区域,则脑部峰值比吸收率会进一步增加。与3T相比,这种情况在7T时更为普遍。此外,还发现基本结构的笛卡尔FDTD建模产生的局部比吸收率相对高于简单非笛卡尔FDTD建模获得的局部比吸收率。

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