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分析在 3T MRI 下,深部脑刺激器导联的铅电阻率对特定吸收率的作用。

Analysis of the role of lead resistivity in specific absorption rate for deep brain stimulator leads at 3T MRI.

机构信息

Division of Physics, Office of Science and Engineering Laboratories, Center for Devices and Radiological Health, U.S. Food and Drug Administration, Silver Spring, MD 20993, USA.

出版信息

IEEE Trans Med Imaging. 2010 Apr;29(4):1029-38. doi: 10.1109/TMI.2010.2040624. Epub 2010 Mar 22.

Abstract

Magnetic resonance imaging (MRI) on patients with implanted deep brain stimulators (DBSs) can be hazardous because of the antenna-effect of leads exposed to the incident radio-frequency field. This study evaluated electromagnetic field and specific absorption rate (SAR) changes as a function of lead resistivity on an anatomically precise head model in a 3T system. The anatomical accuracy of our head model allowed for detailed modeling of the path of DBS leads between epidermis and the outer table. Our electromagnetic finite difference time domain (FDTD) analysis showed significant changes of 1 g and 10 g averaged SAR for the range of lead resistivity modeled, including highly conductive leads up to highly resistive leads. Antenna performance and whole-head SAR were sensitive to the presence of the DBS leads only within 10%, while changes of over one order of magnitude were observed for the peak 10 g averaged SAR, suggesting that local SAR values should be considered in DBS guidelines. With rho(lead) = rho(copper) , and the MRI coil driven to produce a whole-head SAR without leads of 3.2 W/kg, the 1 g averaged SAR was 1080 W/kg and the 10 g averaged SAR 120 W/kg at the tip of the DBS lead. Conversely, in the control case without leads, the 1 g and 10 g averaged SAR were 0.5 W/kg and 0.6 W/kg, respectively, in the same location. The SAR at the tip of lead was similar with electrically homogeneous and electrically heterogeneous models. Our results show that computational models can support the development of novel lead technology, properly balancing the requirements of SAR deposition at the tip of the lead and power dissipation of the system battery.

摘要

在植入深部脑刺激器 (DBS) 的患者中进行磁共振成像 (MRI) 可能会有危险,因为暴露于入射射频场的导线会产生天线效应。本研究评估了在 3T 系统中,在解剖精确的头部模型上,作为导线电阻率函数的电磁场和比吸收率 (SAR) 变化。我们的头部模型解剖学的准确性允许在表皮和外板之间 DBS 导线的路径进行详细建模。我们的电磁有限差分时域 (FDTD) 分析表明,在所建模的导线电阻率范围内,1 g 和 10 g 平均 SAR 发生了显著变化,包括高导电性导线和高电阻性导线。天线性能和全头部 SAR 仅对 DBS 导线的存在敏感 10%,而 10 g 平均 SAR 的峰值变化超过一个数量级,这表明在 DBS 指南中应考虑局部 SAR 值。当 rho(lead) = rho(copper) ,并且 MRI 线圈驱动产生无导线的全头部 SAR 为 3.2 W/kg 时,1 g 平均 SAR 为 1080 W/kg,DBS 导线尖端的 10 g 平均 SAR 为 120 W/kg。相反,在没有导线的对照情况下,同一位置的 1 g 和 10 g 平均 SAR 分别为 0.5 W/kg 和 0.6 W/kg。在电均匀和电非均匀模型中,导线尖端的 SAR 相似。我们的结果表明,计算模型可以支持新型导线技术的发展,正确平衡导线尖端 SAR 沉积和系统电池功耗的要求。

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