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稀磁半导体中杂质聚集和非载流子诱导的铁磁相互作用:以Cu2O:Co为例。

Impurity clustering and ferromagnetic interactions that are not carrier induced in dilute magnetic semiconductors: the case of Cu2O:Co.

作者信息

Raebiger Hannes, Lany Stephan, Zunger Alex

机构信息

National Renewable Energy Laboratory, Golden, Colorado 80401, USA.

出版信息

Phys Rev Lett. 2007 Oct 19;99(16):167203. doi: 10.1103/PhysRevLett.99.167203. Epub 2007 Oct 18.

Abstract

Current models for ferromagnetism in diluted magnetic semiconductors, such as "p-d exchange" or "double-exchange", rely on the presence of partially filled gap states. We point out a new mechanism, not requiring partially filled states, in which ferromagnetic coupling arises from the occupation of previously unoccupied levels when two transition metal impurities form a close pair. We find from first-principles calculations that this mechanism explains strong ferromagnetic coupling between Co impurities in Cu2O, and at the same time gives rise to Co clustering.

摘要

目前用于稀释磁性半导体中铁磁性的模型,如“p-d交换”或“双交换”,依赖于部分填充的能隙态的存在。我们指出了一种新机制,该机制不需要部分填充态,其中当两个过渡金属杂质形成紧密对时,铁磁耦合源于先前未占据能级的占据。我们从第一性原理计算中发现,这种机制解释了Cu2O中Co杂质之间的强铁磁耦合,同时导致了Co的聚集。

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