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超高电压电子显微镜的微观断层扫描及其应用

Microscopic tomography with ultra-HVEM and applications.

作者信息

Takaoka Akio, Hasegawa Toshiaki, Yoshida Kiyokazu, Mori Hirotaro

机构信息

Research Center for Ultra-HVEM, Osaka University, Mihogaoka 7-1, Ibaraki, Osaka, Japan.

出版信息

Ultramicroscopy. 2008 Feb;108(3):230-8. doi: 10.1016/j.ultramic.2007.06.008. Epub 2007 Oct 22.

Abstract

The ultra-HVEM with an accelerating voltage of 3 MV at Osaka University is capable of achieving excellent penetration and resolution for thick specimens. We obtained images of 5-microm-thick slices tilted at angles of up to 70 degrees for biological samples and observed stick-shaped samples of Si devices free from missing zone. These features make the ultra-HVEM an invaluable extension of 3D observation by electron tomography. In this paper, we introduce aspects of ultra-HVEM tomography; specifically, the magnification, the amount of image blurring for thick samples and the electron staining method. Finally, we give some typical applications in the fields of cell biology, pathology and electrical engineering.

摘要

大阪大学的加速电压为3兆伏的超高压电子显微镜能够对厚样本实现出色的穿透和分辨率。我们获取了生物样本倾斜角度高达70度的5微米厚切片的图像,并观察了无缺失区域的硅器件棒状样本。这些特性使超高压电子显微镜成为电子断层扫描三维观察的宝贵扩展。在本文中,我们介绍了超高压电子显微镜断层扫描的各个方面;具体而言,放大倍数、厚样本的图像模糊量以及电子染色方法。最后,我们给出了在细胞生物学、病理学和电气工程领域的一些典型应用。

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