Jeong Chaehwan, Boo Seongjae, Jeon Minsung, Kamisako Koichi
Energy and Applied Optics Team, Gwangju Research Center Korea Institute of Industrial Technology, 506-824 Gwangju, Korea.
J Nanosci Nanotechnol. 2007 Nov;7(11):4169-73. doi: 10.1166/jnn.2007.064.
The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 degrees C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm(-1), which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.
采用电感耦合等离子体化学气相沉积（ICP-CVD）法制备了可作为太阳能电池钝化或吸收层的氢化非晶硅（a-Si:H）薄膜，并对其特性进行了研究。通过改变气体比例（H2/SiH4）、射频（RF）功率和衬底温度等参数来进行a-Si:H薄膜的沉积过程，同时将工作压力固定在70 m Torr。通过测量薄膜厚度、光学带隙（eV）、光敏性、键结构和表面粗糙度来研究其特性。当RF功率和衬底温度分别为300瓦和200℃时，获得了与本征a-Si:H薄膜相似的光学带隙和光敏性。在所有条件下均发现了2000 cm(-1)处的Si-H伸缩模式，这意味着薄膜质量良好。与采用传统PECVD方法沉积的a-Si:H薄膜相比，尽管RF功率增加到400瓦，但表面粗糙度的平均值有所改善。这些结果表明了利用ICP-CVD开发太阳能电池的潜力，该方法对等离子体的损伤相对较小。
