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纳米结构器件的物理电化学

Physical electrochemistry of nanostructured devices.

作者信息

Bisquert Juan

机构信息

Departament de Física, Universitat Jaume I, 12071, Castelló, Spain.

出版信息

Phys Chem Chem Phys. 2008 Jan 7;10(1):49-72. doi: 10.1039/b709316k. Epub 2007 Aug 8.

Abstract

This Perspective reviews recent developments in experimental techniques and conceptual methods applied to the electrochemical properties of metal-oxide semiconductor nanostructures and organic conductors, such as those used in dye-sensitized solar cells, high-energy batteries, sensors, and electrochromic devices. The aim is to provide a broad view of the interpretation of electrochemical and optoelectrical measurements for semiconductor nanostructures (sintered colloidal particles, nanorods, arrays of quantum dots, etc.) deposited or grown on a conducting substrate. The Fermi level displacement by potentiostatic control causes a broad change of physical properties such as the hopping conductivity, that can be investigated over a very large variation of electron density. In contrast to traditional electrochemistry, we emphasize that in nanostructured devices we must deal with systems that depart heavily from the ideal, Maxwell-Boltzmann statistics, due to broad distributions of states (energy disorder) and interactions of charge carriers, therefore the electrochemical analysis must be aided by thermodynamics and statistical mechanics. We discuss in detail the most characteristic densities of states, the chemical capacitance, and the transport properties, specially the chemical diffusion coefficient, mobility, and generalized Einstein relation.

摘要

本视角回顾了应用于金属氧化物半导体纳米结构和有机导体电化学性质的实验技术和概念方法的最新进展,这些材料用于染料敏化太阳能电池、高能电池、传感器和电致变色器件等。目的是全面介绍对沉积或生长在导电基底上的半导体纳米结构(烧结胶体颗粒、纳米棒、量子点阵列等)进行电化学和光电测量的解释。通过恒电位控制实现的费米能级位移会导致诸如跳跃电导率等物理性质的广泛变化,这种变化可在非常大的电子密度变化范围内进行研究。与传统电化学不同,我们强调在纳米结构器件中,由于态的广泛分布(能量无序)和电荷载流子的相互作用,我们必须处理与理想的麦克斯韦 - 玻尔兹曼统计有很大偏差的系统,因此电化学分析必须借助热力学和统计力学。我们详细讨论了最具特征的态密度、化学电容和输运性质,特别是化学扩散系数、迁移率和广义爱因斯坦关系。

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