Bisquert Juan
Institute of Advanced Materials (INAM), Universitat Jaume I, 12006Castelló, Spain.
Yonsei Frontier Lab, Yonsei University, Seoul03722, South Korea.
J Phys Chem Lett. 2022 Aug 11;13(31):7320-7335. doi: 10.1021/acs.jpclett.2c01776. Epub 2022 Aug 3.
The recombination lifetime is a central quantity of optoelectronic devices, as it controls properties such as the open-circuit voltage and light emission rates. Recently, the lifetime properties of halide perovskite devices have been measured over a wide range of the photovoltage, using techniques associated with a steady state by small perturbation methods. It has been remarked that observation of the lifetime is affected by different additional properties of the device, such as multiple trapping effects and capacitive charging. We discuss the meaning of delay factors in the observations of recombination lifetime in halide perovskites. We formulate a general equivalent circuit model that is a basis for the interpretation of all the small perturbation techniques. We discuss the connection of the recombination model to the previous reports of impedance spectroscopy of halide perovskites. Finally, we comment on the correlation properties of the different light-modulated techniques.
复合寿命是光电器件的一个核心参数，因为它控制着诸如开路电压和发光速率等特性。最近，通过与小扰动方法的稳态相关的技术，在很宽的光电压范围内测量了卤化物钙钛矿器件的寿命特性。有人指出，寿命的观测受到器件不同附加特性的影响，例如多重俘获效应和电容充电。我们讨论了卤化物钙钛矿复合寿命观测中延迟因子的含义。我们建立了一个通用的等效电路模型，作为解释所有小扰动技术的基础。我们讨论了复合模型与先前卤化物钙钛矿阻抗谱报告的联系。最后，我们评论了不同光调制技术的相关特性。
