Sinha Godhuli, Ganguli Dibyendu, Chaudhuri Subhadra
Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata, 700 032, India.
J Colloid Interface Sci. 2008 Mar 1;319(1):123-9. doi: 10.1016/j.jcis.2007.11.014. Epub 2007 Nov 21.
Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.
使用不同ω值的双（2-乙基己基）磺基琥珀酸钠（AOT）/正己烷/乙二醇单甲醚（EGME）反胶束介导的溶剂热法，成功地将氧化镓（β-Ga2O3）纳米颗粒沉积在石英玻璃基板上。Ga2O3颗粒的平均直径约为2-3nm，并且发现其与反胶束的ω值近似无关。然而，当Ga2O3纳米晶薄膜在900℃的流动NH3气氛中氮化1小时时，所得氮化镓（纤锌矿-GaN）纳米颗粒的平均直径在3-9nm之间变化。通过X射线衍射（XRD）、透射电子显微镜（TEM）、傅里叶变换红外（FTIR）光谱、紫外可见光谱和光致发光对Ga2O3和GaN的纳米晶薄膜进行了表征，以便明确研究它们的化学和物理性质。
