Yoo Jung Ho, Yang Jun-Mo, Ulugbek Shaislamov, Ahn Chi Won, Hwang Wook-Jung, Park Joong Keun, Park Chul Min, Hong Seung Bum, Kim Joong Jung, Shindo Daisuke
New Technology & Analysis Division, National Nanofab Center, Daejeon 305-806, Korea.
J Electron Microsc (Tokyo). 2008 Jan;57(1):13-8. doi: 10.1093/jmicro/dfm037. Epub 2008 Jan 5.
The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, DeltaV(p-n), by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, DeltaV(p-n) was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.
利用背侧离子研磨法结合聚焦离子束技术制备的样品，通过电子全息术实现了二维掺杂剂分布的可视化以及对 p-n 结内建电势 ΔV(p-n) 的定量分析。能够获得具有低表面损伤和逐渐变化厚度的大视场掺杂剂分布。通过使用电子全息术的相位信息和电子能量损失谱的厚度信息进行定量分析，假设两个表面上的死层厚度为 50 nm，则估计 ΔV(p-n) 约为 0.78 V，这表明与计算值的差异在 12% 以内。这表明背侧离子研磨法是一种非常有前景的样品制备技术，可用于通过电子全息术对掺杂剂分布进行可靠的定量分析。
