Song Changyong, Bergstrom Raymond, Ramunno-Johnson Damien, Jiang Huaidong, Paterson David, de Jonge Martin D, McNulty Ian, Lee Jooyoung, Wang Kang L, Miao Jianwei
Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA.
Phys Rev Lett. 2008 Jan 18;100(2):025504. doi: 10.1103/PhysRevLett.100.025504.
We report the first demonstration of resonant x-ray diffraction microscopy for element specific imaging of buried structures with a pixel resolution of approximately 15 nm by exploiting the abrupt change in the scattering cross section near electronic resonances. We performed nondestructive and quantitative imaging of buried Bi structures inside a Si crystal by directly phasing coherent x-ray diffraction patterns acquired below and above the Bi M5 edge. We anticipate that resonant x-ray diffraction microscopy will be applied to element and chemical state specific imaging of a broad range of systems including magnetic materials, semiconductors, organic materials, biominerals, and biological specimens.
我们报道了首次利用电子共振附近散射截面的突变,对埋藏结构进行元素特异性成像的共振X射线衍射显微镜,其像素分辨率约为15纳米。我们通过对在Bi M5边下方和上方采集的相干X射线衍射图案直接进行相位分析,对Si晶体内部埋藏的Bi结构进行了无损定量成像。我们预计共振X射线衍射显微镜将应用于包括磁性材料、半导体、有机材料、生物矿物和生物标本在内的广泛系统的元素和化学状态特异性成像。