Kumar S R Sarath, Kasiviswanathan S
Department of Physics, Indian Institute of Technology Madras, Chennai, Tamilnadu 600036, India.
Rev Sci Instrum. 2008 Feb;79(2 Pt 1):024302. doi: 10.1063/1.2869039.
An experimental setup is developed for the measurement of the Seebeck coefficient of thin wires and thin films in the temperature range of 300-650 K. The setup makes use of the integral method for measuring the Seebeck voltage across the sample. Two pointed copper rods with in-built thermocouples serve as hot and cold probes as well as leads for measuring the Seebeck voltage. The setup employs localized heating and enables easy sample loading using a spring loaded mounting system and is fully automated. Test measurements are made on a constantan wire and indium tin oxide (ITO) thin film for illustration. The Seebeck voltage obtained for constantan wire is in agreement with the NIST data for copper constantan couple with an error of 1%. The calculated carrier concentration of ITO film from the Seebeck coefficient measurement is comparable with that obtained by electrical transport measurements. The error in the Seebeck coefficient is estimated to be within 3%.
开发了一种实验装置，用于测量细金属丝和薄膜在300 - 650 K温度范围内的塞贝克系数。该装置采用积分法测量样品两端的塞贝克电压。两根内置热电偶的尖头铜棒用作热探针和冷探针，以及测量塞贝克电压的引线。该装置采用局部加热，通过弹簧加载安装系统实现样品的轻松加载，并且是全自动的。为了说明，对康铜丝和氧化铟锡（ITO）薄膜进行了测试测量。康铜丝获得的塞贝克电压与美国国家标准与技术研究院（NIST）关于铜 - 康铜热电偶的数据一致，误差为1%。通过塞贝克系数测量计算得到的ITO薄膜载流子浓度与通过电输运测量得到的结果相当。塞贝克系数的误差估计在3%以内。
