Melhem Amer, Rogé Vincent, Huynh T T Dai, Stolz Arnaud, Talbi Abderazek, Tchiffo-Tameko Cyril, Lecas Thomas, Boulmer-Leborgne Chantal, Millon Eric, Semmar Nadjib
Groupe de Recherches sur l'Energétique des Milieux Ionisés (GREMI), CNRS UMR 7344 Université dOrléans, 45067 Orléans Cedex 2, France.
Rev Sci Instrum. 2018 Nov;89(11):113901. doi: 10.1063/1.5035154.
In this paper, an original homemade system is presented in detail for the electrical and thermoelectrical characterizations of several types of materials from bulk to thin films. This setup was built using a modulated CO laser beam to probe the thermoelectric properties at different depths below the surface. It allows a simultaneous measurement of the electrical conductivity () and the Seebeck coefficient (), from room temperature up to 250 °C. A commercial sample of BiTe was first used to validate the Seebeck coefficient measurement. Single crystalline silicon (sc-Si) was used for the uncertainty quantification during the simultaneous measurement of the Seebeck coefficient and the electrical conductivity. At the micrometer scale, thermoelectric characterization of the mesoporous Si (50 m thickness) was achieved and results gave very promising values (S ≈ 700 V K) for micro-thermo-generator fabrication. In the case of thin film materials, metals (copper and constantan) and oxide thin films (titanium oxide) were also characterized in the in-plane configuration in order to determine the metrology limits of our thermoelectric setup. In this case, a typical sensitivity of about 2V K was achieved.
本文详细介绍了一种原创的自制系统，用于对从块状材料到薄膜的几种材料进行电学和热电特性表征。该装置利用调制的CO激光束来探测表面以下不同深度处的热电特性。它能够在室温至250°C的范围内同时测量电导率（）和塞贝克系数（）。首先使用BiTe的商业样品来验证塞贝克系数的测量。在同时测量塞贝克系数和电导率期间，使用单晶硅（sc-Si）进行不确定度量化。在微米尺度上，实现了对介孔硅（厚度为50μm）的热电特性表征，其结果为微型热发电机制造提供了非常有前景的值（S≈700μV K）。对于薄膜材料，还对面内配置的金属（铜和康铜）以及氧化物薄膜（氧化钛）进行了表征，以确定我们热电装置的计量极限。在这种情况下，实现了约2μV K的典型灵敏度。
