Grozema Ferdinand C, Tonzani Stefano, Berlin Yuri A, Schatz George C, Siebbeles Laurens D A, Ratner Mark A
Opto-electronic Materials Section, DelftChemTech, Delft University of Technology, Julianalaan 136, 2628 BL, Delft, The Netherlands.
J Am Chem Soc. 2008 Apr 16;130(15):5157-66. doi: 10.1021/ja078162j. Epub 2008 Mar 7.
We present a theoretical study of the positive charge transfer in stilbene-linked DNA hairpins containing only AT base pairs using a tight-binding model that includes a description of structural fluctuations. The parameters are the charge transfer integral between neighboring units and the site energies. Fluctuations in these parameters were studied by a combination of molecular dynamics simulations of the structural dynamics and density functional theory calculations of charge transfer integrals and orbital energies. The fluctuations in both parameters were found to be substantial and to occur on subpicosecond time scales. Tight-binding calculations of the dynamics of charge transfer show that for short DNA hairpins (<4 base pairs) the charge moves by a single-step superexchange mechanism with a relatively strong distance dependence. For longer hairpins, a crossover to a fluctuation-assisted incoherent mechanism was found. Analysis of the charge distribution during the charge transfer process indicates that for longer bridges substantial charge density builds up on the bridge, but this charge density is mostly confined to the adenine next to the hole donor. This is caused by the electrostatic interaction between the hole on the AT bridge and the negative charge on the hole donor. We conclude both that the relatively strong distance dependence for short bridges is mostly due to this electrostatic interaction and that structural fluctuations play a critical role in the charge transfer, especially for longer bridge lengths.
我们使用包含结构涨落描述的紧束缚模型,对仅含AT碱基对的芪连接DNA发夹中的正电荷转移进行了理论研究。参数为相邻单元之间的电荷转移积分和位点能量。通过结构动力学的分子动力学模拟与电荷转移积分及轨道能量的密度泛函理论计算相结合的方法,研究了这些参数的涨落。发现这两个参数的涨落都很显著,且发生在亚皮秒时间尺度上。电荷转移动力学的紧束缚计算表明,对于短DNA发夹(<4个碱基对),电荷通过单步超交换机制移动,具有相对较强的距离依赖性。对于较长的发夹,发现转变为涨落辅助的非相干机制。对电荷转移过程中电荷分布的分析表明,对于较长的桥,桥上会积累大量电荷密度,但这种电荷密度大多局限于空穴供体旁边的腺嘌呤上。这是由AT桥上的空穴与空穴供体上的负电荷之间的静电相互作用引起的。我们得出结论,短桥相对较强的距离依赖性主要归因于这种静电相互作用,并且结构涨落在电荷转移中起着关键作用,特别是对于较长的桥长度。