Boudreau M G, Wallace S G, Balcaitis G, Murugkar S, Haugen H K, Mascher P
Department of Engineering Physics, McMaster University, Centre for Electrophotonic Materials and Devices, Hamilton, Ontario L8S 4M1, Canada.
Appl Opt. 2000 Feb 20;39(6):1053-8. doi: 10.1364/ao.39.001053.
Thin-film interference filters, suitable for use on GaAs- and InP-based lasers, have been fabricated by use of the electron-cyclotron resonance plasma-enhanced chemical vapor deposition technique. Multilayer film structures composed of silicon oxynitride material have been deposited at low temperatures with an in situ rotating compensator ellipsometer for monitoring the index of refraction and thickness of the deposited layers. Individual layers with an index of refraction from 3.3 to 1.46 at 633 nm have been produced with a run-to-run reproducibility of 0.005 and a thickness control of 10 A. Several filter designs have been implemented, including high-reflection filters, one- and two-layer anitreflection filters, and narrow-band high-reflection filters. It is shown that an accurate measurement of the filter optical properties during deposition is possible and that controlled reflectance spectra can be obtained.
利用电子回旋共振等离子体增强化学气相沉积技术制备了适用于基于砷化镓和磷化铟的激光器的薄膜干涉滤光片。采用原位旋转补偿椭圆偏振仪在低温下沉积了由氮氧化硅材料组成的多层膜结构，以监测沉积层的折射率和厚度。在633nm波长下制备了折射率从3.3到1.46的单层膜，批间重复性为0.005，厚度控制在10埃。实现了几种滤光片设计，包括高反射滤光片、单层和双层抗反射滤光片以及窄带高反射滤光片。结果表明，在沉积过程中对滤光片光学性能进行精确测量是可行的，并且可以获得可控的反射光谱。
