Weber Jörn, Bartzsch Hagen, Frach Peter
Fraunhofer Institut für Elektronenstrahl und Plasmatechnik (FEP), Winterbergstrasse 28, 01277 Dresden, Germany.
Appl Opt. 2008 May 1;47(13):C288-92. doi: 10.1364/ao.47.00c288.
The optical properties of silicon oxynitride films deposited by reactive dc magnetron sputtered films have been investigated. In particular the absorption characteristics of silicon nitride thin films in the visible spectrum and their optical bandgap were analyzed with regard to their composition and deposition properties. It can be shown that there is a significant difference between the absorption in the visible spectrum and the optical bandgap for these layers. The influence of unipolar and bipolar pulse modes on the optical layer properties is presented. The extinction coefficient for silicon nitride single layers could be reduced to a value of 2 x 10(-4) at 500 nm without external heating. There is also the dependence of the absorption of silicon oxynitride layers on the discharge voltage. We present the resulting spectra of rugate and edge filters that consist of these layers and offer lower absorption than single layers.
对通过反应性直流磁控溅射沉积的氮氧化硅薄膜的光学特性进行了研究。特别针对氮化硅薄膜在可见光谱中的吸收特性及其光学带隙,就其成分和沉积特性进行了分析。结果表明,这些层在可见光谱中的吸收与光学带隙之间存在显著差异。介绍了单极和双极脉冲模式对光学层特性的影响。在不进行外部加热的情况下,氮化硅单层的消光系数在500nm处可降低至2×10⁻⁴。氮氧化硅层的吸收还取决于放电电压。我们展示了由这些层组成的波纹滤光片和边缘滤光片的最终光谱,它们的吸收比单层更低。