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离子束沉积的碳化硅、钼、二硅化镁和锑化铟薄膜以及蒸发铬薄膜在极紫外波段的反射率测量和光学常数

Reflectance measurements and optical constants in the extreme ultraviolet for thin films of ion-beam-deposited SiC, Mo, Mg2Si, and InSb and of evaporated Cr.

作者信息

Larruquert J I, Keski-Kuha R A

机构信息

NASA/Goddard Space Flight Center.

出版信息

Appl Opt. 2000 Jun 1;39(16):2772-81. doi: 10.1364/ao.39.002772.

Abstract

Reflectance measurements and optical constants of thin films of ion-beam-deposited SiC, Mo, Mg(2)Si, and InSb and of evaporated Cr have been measured in the extreme-ultraviolet (EUV) spectral region from 49.0 to 200.0 nm. In this spectral region no optical constant data were available for materials deposited by ion-beam deposition. We compared our data with those for bulk samples and for thin films prepared by different techniques. The goal of this research has been to study candidate materials for multilayer coatings in the EUV.

摘要

已在49.0至200.0纳米的极紫外(EUV)光谱区域测量了离子束沉积的碳化硅、钼、二硅化镁和锑化铟薄膜以及蒸发铬薄膜的反射率测量值和光学常数。在该光谱区域,没有离子束沉积材料的光学常数数据。我们将我们的数据与块状样品以及通过不同技术制备的薄膜的数据进行了比较。这项研究的目的是研究极紫外多层涂层的候选材料。

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