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一种在342纳米处发光的氧化锌纳米棒无机/有机异质结构发光二极管。

A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm.

作者信息

Sun X W, Huang J Z, Wang J X, Xu Z

机构信息

School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 Singapore.

出版信息

Nano Lett. 2008 Apr;8(4):1219-23. doi: 10.1021/nl080340z. Epub 2008 Mar 19.

DOI:10.1021/nl080340z
PMID:18348540
Abstract

An inorganic/organic heterostructure light-emitting diode consisting of the hole-transporting layer N, N'-di(naphth-2-yl)- N, N'-diphenylbenzidine (NPB) and n-type ZnO nanorods fabricated by hydrothermal decomposition is reported. Poly(methyl methacrylate) was used to form a smooth surface on top of ZnO nanorod array with ZnO nanorod tops exposed for subsequent NPB deposition. An unusual ultraviolet emission at 342 nm was observed in the electroluminescence spectrum. Compared to band gap energy of ZnO (3.37 eV), the excitonic emission is blue-shifted and broadened. The mechanism of the blue shift is discussed in terms of the energy band diagram of the heterostructure.

摘要

报道了一种由空穴传输层N,N'-二(萘-2-基)-N,N'-二苯基联苯胺(NPB)和通过水热分解制备的n型ZnO纳米棒组成的无机/有机异质结构发光二极管。聚甲基丙烯酸甲酯用于在ZnO纳米棒阵列顶部形成光滑表面,使ZnO纳米棒顶部暴露,以便随后沉积NPB。在电致发光光谱中观察到在342nm处有异常的紫外发射。与ZnO的带隙能量(3.37eV)相比,激子发射发生蓝移并变宽。根据异质结构的能带图讨论了蓝移的机制。

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