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通过共振光电子衍射探测TiO₂(110)表面的缺陷态。

Defect states at the TiO2(110) surface probed by resonant photoelectron diffraction.

作者信息

Krüger P, Bourgeois S, Domenichini B, Magnan H, Chandesris D, Le Fèvre P, Flank A M, Jupille J, Floreano L, Cossaro A, Verdini A, Morgante A

机构信息

Institut Carnot de Bourgogne, UMR 5209 CNRS-Université de Bourgogne, BP 47870, 21078 Dijon Cedex, France.

出版信息

Phys Rev Lett. 2008 Feb 8;100(5):055501. doi: 10.1103/PhysRevLett.100.055501. Epub 2008 Feb 4.

Abstract

The charge distribution of the defect states at the reduced TiO(2)(110) surface is studied via a new method, the resonant photoelectron diffraction. The diffraction pattern from the defect state, excited at the Ti-2p-3d resonance, is analyzed in the forward scattering approach and on the basis of multiple scattering calculations. The defect charge is found to be shared by several surface and subsurface Ti sites with the dominant contribution on a specific subsurface site in agreement with density functional theory calculations.

摘要

通过一种新方法——共振光电子衍射,研究了还原态TiO(2)(110)表面缺陷态的电荷分布。在Ti-2p-3d共振激发下,对缺陷态的衍射图样采用前向散射方法并基于多重散射计算进行分析。结果发现,缺陷电荷由几个表面和次表面Ti位点共享,其中一个特定次表面位点的贡献占主导,这与密度泛函理论计算结果一致。

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