Prochazka I
Appl Opt. 2001 Nov 20;40(33):6012-8. doi: 10.1364/ao.40.006012.
The performance of commercially available InGaAs/InP avalanche photodiodes as single-photon detectors at a 1.55-mum wavelength has been investigated. A new active quenching and gating circuit, tailored for operation of these diodes at temperatures in the range from room temperature to -60 degrees C and achievable by means of thermoelectrical cooling, has been developed. Careful tuning of the diodes' operating conditions resulted in a significant reduction of afterpulsing effects; it permitted operation of the detectors with high repetition rates. A noise-equivalent power of 7 x 10(-16) W/Hz(1/2) was obtained at a 1.55-mum wavelength.
研究了市售的铟镓砷/磷化铟雪崩光电二极管在1.55微米波长下作为单光子探测器的性能。开发了一种新型的有源猝灭和选通电路，该电路针对这些二极管在从室温到-60摄氏度的温度范围内运行进行了定制，并且可以通过热电冷却实现。对二极管工作条件的仔细调整显著降低了后脉冲效应；这使得探测器能够以高重复率运行。在1.55微米波长下获得了7×10^(-16)瓦/赫兹^(1/2)的噪声等效功率。
