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渗透压的变化可调节三叉神经节神经元中的电压门控钙通道。

Changes in osmolality modulate voltage-gated calcium channels in trigeminal ganglion neurons.

作者信息

Chen Lei, Liu Changjin, Liu Lieju

机构信息

Department of Physiology, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, PR China.

出版信息

Brain Res. 2008 May 7;1208:56-66. doi: 10.1016/j.brainres.2008.02.048. Epub 2008 Feb 29.

Abstract

Voltage-gated calcium channels (VGCCs) participate in many important physiological functions. However whether VGCCs are modulated by changes of osmolarity and involved in anisotonicity-induced nociception is still unknown. For this reason by using whole-cell patch clamp techniques in rat and mouse trigeminal ganglion (TG) neurons we tested the effects of hypo- and hypertonicity on VGCCs. We found that high-voltage-gated calcium current (I(HVA)) was inhibited by both hypo- and hypertonicity. In rat TG neurons, the inhibition by hypotonicity was mimicked by Transient Receptor Potential Vanilloid 4 receptor (TRPV4) activator but hypotonicity did not exhibit inhibition in TRPV4(-/-) mice TG neurons. Concerning the downstream signaling pathways, antagonism of PKG pathway selectively reduced the hypotonicity-induced inhibition, whereas inhibition of PLC- and PI3K-mediated pathways selectively reduced the inhibition produced by hypertonicity. In summary, although the effects of hypo- and hypertonicity show similar phenotype, receptor and intracellular signaling pathways were selective for hypo- versus hypertonicity-induced inhibition of I(HVA).

摘要

电压门控钙通道(VGCCs)参与许多重要的生理功能。然而,VGCCs是否受渗透压变化调节以及是否参与等渗性诱导的伤害感受仍不清楚。因此,我们采用全细胞膜片钳技术,在大鼠和小鼠三叉神经节(TG)神经元中测试了低渗和高渗对VGCCs的影响。我们发现,高电压门控钙电流(I(HVA))受到低渗和高渗的抑制。在大鼠TG神经元中,瞬时受体电位香草酸受体4(TRPV4)激活剂可模拟低渗的抑制作用,但低渗在TRPV4基因敲除小鼠的TG神经元中未表现出抑制作用。关于下游信号通路,蛋白激酶G(PKG)通路的拮抗剂可选择性降低低渗诱导的抑制作用,而抑制磷脂酶C(PLC)和磷脂酰肌醇-3激酶(PI3K)介导的通路可选择性降低高渗产生的抑制作用。总之,尽管低渗和高渗的作用表现出相似的表型,但受体和细胞内信号通路对低渗和高渗诱导的I(HVA)抑制作用具有选择性。

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