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铊离子诱导的电流微门控表明,离子与孔道的相互作用导致了大电导钙激活钾通道(MaxiK)选择性过滤器的不稳定。

Tl+-induced micros gating of current indicates instability of the MaxiK selectivity filter as caused by ion/pore interaction.

作者信息

Schroeder Indra, Hansen Ulf-Peter

机构信息

Department of Structural Biology, University of Kiel, 24098 Kiel, Germany.

出版信息

J Gen Physiol. 2008 Apr;131(4):365-78. doi: 10.1085/jgp.200809956.

Abstract

Patch clamp experiments on single MaxiK channels expressed in HEK293 cells were performed at high temporal resolution (50-kHz filter) in asymmetrical solutions containing 0, 25, 50, or 150 mM Tl+ on the luminal or cytosolic side with [K+] + [Tl+] = 150 mM and 150 mM K+ on the other side. Outward current in the presence of cytosolic Tl+ did not show fast gating behavior that was significantly different from that in the absence of Tl+. With luminal Tl+ and at membrane potentials more negative than -40 mV, the single-channel current showed a negative slope resistance concomitantly with a flickery block, resulting in an artificially reduced apparent single-channel current I(app). The analysis of the amplitude histograms by beta distributions enabled the estimation of the true single-channel current and the determination of the rate constants of a simple two-state O-C Markov model for the gating in the bursts. The voltage dependence of the gating ratio R = I(true)/I(app) = (k(CO) + k(OC))/k(CO) could be described by exponential functions with different characteristic voltages above or below 50 mM Tl(+). The true single-channel current I(true) decreased with Tl+ concentrations up to 50 mM and stayed constant thereafter. Different models were considered. The most likely ones related the exponential increase of the gating ratio to ion depletion at the luminal side of the selectivity filter, whereas the influence of [Tl+] on the characteristic voltage of these exponential functions and of the value of I(true) were determined by [Tl+] at the inner side of the selectivity filter or in the cavity.

摘要

在含有0、25、50或150 mM Tl⁺的不对称溶液中,对HEK293细胞中表达的单个大电导钙激活钾通道(MaxiK通道)进行膜片钳实验,时间分辨率较高(50 kHz滤波器),膜腔侧或胞质侧含有不同浓度的Tl⁺,另一侧[K⁺] + [Tl⁺] = 150 mM且K⁺浓度为150 mM。胞质侧存在Tl⁺时的外向电流未表现出与无Tl⁺时显著不同的快速门控行为。当膜腔侧存在Tl⁺且膜电位比 -40 mV更负时,单通道电流呈现负斜率电导并伴有闪烁阻断,导致表观单通道电流I(app)人为降低。通过β分布对幅度直方图进行分析,能够估计真实的单通道电流,并确定用于突发门控的简单双态O - C马尔可夫模型的速率常数。门控比率R = I(true)/I(app) = (k(CO) + k(OC))/k(CO)的电压依赖性可用指数函数描述,在50 mM Tl⁺上下具有不同的特征电压。真实的单通道电流I(true)在Tl⁺浓度高达50 mM时降低,此后保持恒定。考虑了不同的模型。最有可能的模型将门控比率的指数增加与选择性过滤器膜腔侧的离子耗尽相关联,而[Tl⁺]对这些指数函数的特征电压和I(true)值的影响由选择性过滤器内侧或腔内的[Tl⁺]决定。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6803/2279167/57e14ae0f880/jgp1310365f01.jpg

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