Tomioka Katsuhiro, Motohisa Junichi, Hara Shinjiroh, Fukui Takashi
Graduate School of Information Science and Technology, Hokkaido University, North14 West9, 060-0814, Sapporo, Japan.
Nano Lett. 2008 Oct;8(10):3475-80. doi: 10.1021/nl802398j. Epub 2008 Sep 11.
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
我们报道了对硅衬底上InAs纳米线生长方向的控制。我们通过在低温下采用流量调制模式对初始Si(111)表面进行改性，在选择性区域金属有机气相外延中实现了在硅上集成垂直InAs纳米线。横截面透射电子显微镜和拉曼散射表明，界面处容纳了具有局部应变的失配位错。
