Olszta Matthew J, Dickey Elizabeth C
Department of Materials Science and Engineering, Center for Dielectric Studies, and The Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA.
Microsc Microanal. 2008 Oct;14(5):451-8. doi: 10.1017/S1431927608080756.
High-resolution transmission electron microscopy and electron energy loss spectroscopy (EELS) were performed on electrochemically anodized niobium and niobium oxide. Sintered anodes of Nb and NbO powders were anodized in 0.1 wt% H3PO4 at 10, 20, and 65 V to form surface Nb2O5 layers with an average anodization constant of 3.6+/-0.2 nm/V. The anode/dielectric interfaces were continuous and the dielectric layers were amorphous except for occurrences of plate-like, orthorhombic pentoxide crystallites in both anodes formed at 65 V. Using EELS stoichiometry quantification and relative chemical shifts of the Nb M4,5 ionization edge, a suboxide transition layer at the amorphous pentoxide interface on the order of 5 nm was detected in the Nb anodes, whereas no interfacial suboxide layers were detected in the NbO anodes.
