Molina S I, Sales D L, Galindo P L, Fuster D, González Y, Alén B, González L, Varela M, Pennycook S J
Departamento de Ciencia de los Materiales e IM y QI, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, Cádiz, Spain.
Ultramicroscopy. 2009 Jan;109(2):172-6. doi: 10.1016/j.ultramic.2008.10.008. Epub 2008 Oct 31.
A phenomenological method is developed to determine the composition of materials, with atomic column resolution, by analysis of integrated intensities of aberration-corrected Z-contrast scanning transmission electron microscopy images. The method is exemplified for InAs(x)P(1-x) alloys using epitaxial thin films with calibrated compositions as standards. Using this approach we have determined the composition of the two-dimensional wetting layer formed between self-assembled InAs quantum wires on InP(001) substrates.
一种现象学方法被开发出来，通过分析像差校正的Z衬度扫描透射电子显微镜图像的积分强度，以原子列分辨率确定材料的成分。该方法以校准成分的外延薄膜作为标准，用于InAs(x)P(1-x)合金进行了示例。使用这种方法，我们确定了在InP(001)衬底上自组装InAs量子线之间形成的二维润湿层的成分。
