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Sir3p与核小体LRS表面之间的补偿性相互作用暗示了它们之间的直接相互作用。

Compensatory interactions between Sir3p and the nucleosomal LRS surface imply their direct interaction.

作者信息

Norris Anne, Bianchet Mario A, Boeke Jef D

机构信息

Department of Molecular Biology and Genetics, Johns Hopkins University School of Medicine, Baltimore, MD, USA.

出版信息

PLoS Genet. 2008 Dec;4(12):e1000301. doi: 10.1371/journal.pgen.1000301. Epub 2008 Dec 12.

Abstract

The previously identified LRS (Loss of rDNA Silencing) domain of the nucleosome is critically important for silencing at both ribosomal DNA and telomeres. To understand the function of the LRS surface in silencing, we performed an EMS mutagenesis screen to identify suppressors of the H3 A75V LRS allele. We identified dominant and recessive mutations in histones H3, H4, and dominant mutations in the BAH (Bromo Adjacent Homology) domain of SIR3. We further characterized a surface of Sir3p critical for silencing via the LRS surface. We found that all alleles of the SIR3 BAH domain were able to 1) generally suppress the loss of telomeric silencing of LRS alleles, but 2) could not suppress SIN (Swi/Snf Independent) alleles or 3) could not suppress the telomeric silencing defect of H4 tail alleles. Moreover, we noticed a complementary trend in the electrostatic changes resulting from most of the histone mutations that gain or lose silencing and the suppressor alleles isolated in SIR3, and the genes for histones H3 and H4. Mutations in H3 and H4 genes that lose silencing tend to make the LRS surface more electronegative, whereas mutations that increase silencing make it less electronegative. Conversely, suppressors of LRS alleles in either SIR3, histone H3, or H4 also tend to make their respective surfaces less electronegative. Our results provide genetic evidence for recent data suggesting that the Sir3p BAH domain directly binds the LRS domain. Based on these findings, we propose an electrostatic model for how an extensive surface on the Sir3p BAH domain may regulate docking onto the LRS surface.

摘要

之前确定的核小体LRS(核糖体DNA沉默缺失)结构域对于核糖体DNA和端粒的沉默至关重要。为了了解LRS表面在沉默中的功能,我们进行了EMS诱变筛选以鉴定H3 A75V LRS等位基因的抑制子。我们在组蛋白H3、H4中鉴定出显性和隐性突变,以及在SIR3的BAH(溴相邻同源)结构域中鉴定出显性突变。我们进一步表征了Sir3p的一个通过LRS表面对沉默至关重要的表面。我们发现SIR3 BAH结构域的所有等位基因能够1)一般抑制LRS等位基因端粒沉默的丧失,但2)不能抑制SIN(不依赖Swi/Snf)等位基因,或3)不能抑制H4尾部等位基因的端粒沉默缺陷。此外,我们注意到大多数获得或丧失沉默的组蛋白突变以及在SIR3中分离出的抑制子等位基因所导致的静电变化,与组蛋白H3和H4的基因存在互补趋势。丧失沉默的H3和H4基因突变往往使LRS表面更具负电性,而增加沉默的突变则使其负电性降低。相反,SIR3、组蛋白H3或H4中LRS等位基因的抑制子也往往使其各自的表面负电性降低。我们的结果为最近的数据提供了遗传学证据,表明Sir3p BAH结构域直接结合LRS结构域。基于这些发现,我们提出了一个静电模型,说明Sir3p BAH结构域上的一个广泛表面可能如何调节与LRS表面的对接。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4c3d/2587916/0d23ed127318/pgen.1000301.g001.jpg

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