González-Carrazco A, Herrera-Zaldívar M, Pal U
Centro de Ciencias de la Materia Condensada, Universidad Nacional Autónoma de México, Apdo. Postal 2681, C.P. 22800, Ensenada, Baja California, México.
J Nanosci Nanotechnol. 2008 Dec;8(12):6598-602.
The effect of indium doping on the point defect formation in ZnO nanostructures is studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) techniques. While the incorporation of a donor dopant like indium should increase the n-type conductivity of ZnO nanostructures, it has been found that formation of V(Zn) native acceptors in heavily doped ZnO nanostructures produces self-compensation effect, creating acceptor states in their band gap. Presence of both donor and acceptor states in heavily indium doped ZnO nanostructures are probed and identified. The mechanism of formation of such donor and acceptor states is discussed.
通过扫描隧道显微镜（STM）和扫描隧道谱（STS）技术研究了铟掺杂对ZnO纳米结构中点缺陷形成的影响。虽然掺入像铟这样的施主掺杂剂应该会提高ZnO纳米结构的n型导电性，但已经发现，在重掺杂的ZnO纳米结构中形成V（Zn）本征受体会产生自补偿效应，在其带隙中产生受主态。对重铟掺杂的ZnO纳米结构中施主态和受主态的存在进行了探测和识别。讨论了这种施主态和受主态的形成机制。
