Huang Chen-Yang, Ku Hao-Min, Liao Wei-Tsai, Chao Chu-Li, Tsay Jenq-Dar, Chao Shiuh
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan, ROC.
Opt Express. 2009 Mar 30;17(7):5624-9. doi: 10.1364/oe.17.005624.
Ta2O5 / SiO2 dielectric multi-layer micro-mirror array (MMA) with 3mm mirror size and 6mm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200 degrees C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200 degrees C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2:56 mm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light.
